Dissemin is shutting down on January 1st, 2025

Published in

American Institute of Physics, Applied Physics Letters, 24(92), p. 242104

DOI: 10.1063/1.2939001

Links

Tools

Export citation

Search in Google Scholar

Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy

Journal article published in 2008 by L. Dobaczewski, S. Bernardini, P. Kruszewski, P. K. Hurley ORCID, V. P. Markevich ORCID, I. D. Hawkins, A. R. Peaker
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

The energy distribution of the Pb centers at the Si/SiO2 interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only Pb0 states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for Pb0 and is presumed to be Pb1.