Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 46(8), p. 16384-16391, 2020
DOI: 10.1039/d0tc03353g
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Improving the photoresponsivity and reducing the persistent photocurrent effect of visible-light ZnO/quantum-dot phototransistors via a TiO2 layer
Journal article published in 2020 by
Byung Jun Kim,
Sungho Park,
Tae Yeon Kim,
Eui Young Jung,
Jong-Am Hong,
Beom-Su Kim,
Woojin Jeon,
Yongsup Park,
Seong Jun Kang 
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Abstract
Conventional visible-light phototransistors based on the heterostructure of wide band gap zinc oxide (ZnO) and colloidal quantum-dots (CdSe/ZnS QDs) have been studied.