Seong Jun Kang
0000-0003-0553-934X
28 papers found
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High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer
Enhancement of the Visible Light Photodetection of Inorganic Photodiodes via Additional Quantum Dots Layers
Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure
A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO2 single layer
Solution processable visible-light and color-selective image sensor with a ZnO/QDs/ZrO2 sandwich structure
Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants
Color Centers in Hexagonal Boron Nitride
Controllable Layer-By-Layer CdSe/ZnS Quantum-Dot Thin Films for Enhanced Performance of Light-Emitting Diodes and Photodetectors
Intrinsically stretchable three primary light-emitting films enabled by elastomer blend for polymer light-emitting diodes
Highly Efficient ITO-Free Quantum-Dot Light Emitting Diodes via Solution-Processed PEDOT:PSS Semitransparent Electrode
Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Solution-Processable Highly Conductive Spinel Structure CuCo2O4 Hole Injection Layer
A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect
An Al-doped TiO2 interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes
Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes
Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al2O3 layer
Evolution of Morphological and Chemical Properties at p–n Junction of Cu(In,Ga)Se2 Solar Cells with Zn(O,S) Buffer Layer as a Function of KF Postdeposition Treatment Time
Improving the performance of quantum-dot light-emitting diodes via an organic–inorganic hybrid hole injection layer
A visible-light phototransistor based on the heterostructure of ZnO and TiO2 with trap-assisted photocurrent generation
Improving the visible-light photoresponse characteristics of a ZnO phototransistor via solution processable Li dopants
Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer
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