Published in

IOP Publishing, Semiconductor Science and Technology, 5(35), p. 055002, 2020

DOI: 10.1088/1361-6641/ab7656

Links

Tools

Export citation

Search in Google Scholar

HfO x -based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application

Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

Full text: Unavailable

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO