Norbert Esser
0000-0003-0345-6823
Technische Universität Berlin
123 papers found
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Clarification of theGaP(001)(2×4)Ga-rich reconstruction by scanning tunneling microscopy andab initiotheory
Sb-mediated Ge growth on singular and vicinal Si(001) surfaces: A surface optical characterization study
Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)
Erratum: Surface-state contribution to the optical anisotropy of Ag(110) surfaces: A reflectance-anisotropy-spectroscopy and photoemission study [Phys. Rev. B58, R10 207 (1998)]
Optical characterization of indium-terminated GaAs(001) surfaces
Surface optical properties of clean Cu(110) and Cu(110)-(2×1)-O
Raman scattering from surface phonons
VUV Ellipsometry on Beryllium Chalcogenides
Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE
(2×4)GaP(001) surface: Atomic structure and optical anisotropy
Ellipsometric studies ofBexZn1−xSebetween 3 eV and 25 eV
Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy
Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range
Surface-state contribution to the optical anisotropy of Ag(110) surfaces: A reflectance-anisotropy-spectroscopy and photoemission study
Atomic structure of InP(001)-(2×4): A dimer reconstruction
Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing
Microscopic structure of GaSb(001) c(2×6) surfaces prepared by Sb decapping of MBE-grown samples
Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples
Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
Hydrogen adsorption on the GaAs(001)-(2×4) surface: A scanning-tunneling-microscopy study
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