Munhyeon Kim
0000-0003-0177-8933
14 papers found
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Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
Efficient Convolutional Processing of Spiking Neural Network With Weight-Sharing Filters
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application
Spiking Neural Network With Weight-Sharing Synaptic Array for Multi-input Processing
Novel Dual Liner Process for Side-Shielded Forksheet Device With Superior Design Margin
Investigation of Device Performance for Fin Angle Optimization in FinFET and Gate-All-Around FETs for 3 nm-Node and Beyond
Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory
Investigation on Variability of Ferroelectric-Gate Field-Effect Transistor Memory by Random Spatial Distribution of Interface Trap
Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin Structure
Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory
Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure
Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective
Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation
Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs
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