Stefano Ossicini - Dissemin

All papers authored by Stefano Ossicini

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2020 Ivan Marri

, Michele Amato

, Matteo Bertocchi, Andrea Ferretti

, Daniele Varsano

, Stefano Ossicini

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

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2017 Ivan Marri

, Elena Degoli

, Stefano Ossicini

First Principle Studies of B and P Doped Si Nanocrystals

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2016 Michele Amato, Matteo Bertocchi

, Stefano Ossicini

Work function bowing in Si1−xGex heterostructures: Ab initio results

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

2015 Sylvain Pouch, Michele Amato, Matteo Bertocchi, Stefano Ossicini

, Nicolas Chevalier, Thierry Mélin, Jean-Michel Hartmann, Olivier Renault, Vincent Delaye, Denis Mariolle, Łukasz Borowik

Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy

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Eleonora Luppi, Elena Degoli, Matteo Bertocchi, Stefano Ossicini

, Valérie Véniard

Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials

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Ivan Marri, Marco Govoni, Stefano Ossicini

Carrier multiplication in silicon nanocrystals: Ab initio results

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Maurizia Palummo, Conor Hogan, Stefano Ossicini

Ab initio energy loss spectra of Si and Ge nanowires

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2014 Federico Iori, Stefano Ossicini

, Riccardo Rurali

Structural and electronic properties of Si1−xGex alloy nanowires

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Michele Amato, Riccardo Rurali, Maurizia Palummo

, Stefano Ossicini

Understanding doping at the nanoscale: The case of codoped Si and Ge nanowires

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C. Summonte, M. Allegrezza, M. Bellettato, F. Liscio, M. Canino

, A. Desalvo, J. López Vidrier, S. Hernández, L. López Conesa

, S. Estradé

, F. Peiró, B. Garrido, P. Löper, M. Schnabel, S. Janz and 2 other authors

Silicon nanocrystals in carbide matrix

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Federico Iori, Stefano Ossicini

, Riccardo Rurali

Conductance fluctuations in Si nanowires studied from first-principles

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Ivan Marri, Marco Govoni, Stefano Ossicini

Red-Shifted Carrier Multiplication Energy Threshold and Exciton Recycling Mechanisms in Strongly Interacting Silicon Nanocrystals

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Satria Zulkarnaen Bisri, Elena Degoli, Nicola Spallanzani, Gopi Krishnan, Bart Jan Kooi, Corneliu Ghica, Maksym Yarema, Wolfgang Heiss

, Olivia Pulci, Stefano Ossicini

, Maria Antonietta Loi

Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations

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Roberto Guerra, Stefano Ossicini

Preferential Positioning of Dopants and Co-Dopants in Embedded and Freestanding Si Nanocrystals

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Matteo Bertocchi, Eleonora Luppi, Elena Degoli, Valérie Véniard, Stefano Ossicini

Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

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2013 Michele Amato, Maurizia Palummo

, Riccardo Rurali, Stefano Ossicini

Silicon-Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications

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Nuria Garcia-Castello, Sergio Illera, Roberto Guerra, Joan Daniel Prades

, Stefano Ossicini

, Albert Cirera

Silicon quantum dots embedded in a SiO2matrix: From structural study to carrier transport properties

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Roberto Guerra, Francesco Cigarini, Stefano Ossicini

Optical absorption and emission of silicon nanocrystals: From single to collective response

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Roberto Guerra, Stefano Ossicini

Role of strain in interacting silicon nanoclusters

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Philipp Löper, Mariaconcetta Canino

, Julian López-Vidrier, Manuel Schnabel, Florian Schindler, Friedemann Heinz, Anke Witzky, Michele Bellettato, Marco Allegrezza, Daniel Hiller, Andreas Hartel, Sebastian Gutsch, Sergi Hernández, Roberto Guerra, Stefano Ossicini

and 3 other authors

Silicon nanocrystals from high-temperature annealing: Characterization on device level

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All papers authored by Stefano Ossicini