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American Institute of Physics, The Journal of Chemical Physics, 21(140), p. 214705

DOI: 10.1063/1.4880756

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Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

Journal article published in 2014 by Matteo Bertocchi, Eleonora Luppi, Elena Degoli, Valérie Véniard, Stefano Ossicini ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems. (C) 2014 AIP Publishing LLC.