Hongyue Wang - Dissemin

Papers authored by Hongyue Wang

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2021 Zhentang Liang, Hongyue Wang

, Bin Zhou, Guoyuan Li

Simulation Analysis of Residual Stress of Sintered Nano-Silver under Multilayer Stacked Module

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Hongyue Wang

, Weijie Zhang, Yijun Shi, Si Chen, Zhiwei Fu, Xiaofeng Yang, Bin Zhou

Investigation of the RDL reliability based on RF characterization

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Yijun Shi, Shan Wu, Hongyue Wang

, Peng Zhao, Yiqiang Chen

A Novel GaN MIS-HEMT with a Source-connected Clamp Electrode for Suppressing Short-channel effect

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This paper is made freely available by the publisher.

Yijun Shi

, Xiao Luo, Hongyue Wang

, Wanjun Chen, Xiaofeng Yang

Effects of Etching Temperature on the Characteristics of Recessed-Anode AlGaN/GaN Schottky Barrier Diodes

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Yijun Shi, Yijun Shi And Hongyue Wang

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect

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2020 Mengjun Li, Jinyan Wang, Bin Zhang, Qianqian Tao, Hongyue Wang

, Qirui Cao, Chengyu Huang, Jingqian Liu, Jianghui Mo, Wengang Wu, Shujun Cai

Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique

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Hongyue Wang

, Po-Chun Hsu, Ming Zhao

, Eddy Simoen

, Arturo Sibaja-Hernandez, Jinyan Wang

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration

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2019 Qirui Cao

, Jinyan Wang, Mengjun Li, Hongyue Wang

, Qianqian Tao, Bin Zhang, Wengang Wu

Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure

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2018 Hongyue Wang

, Jinyan Wang

, Mengjun Li, Qirui Cao

, Min Yu, Yandong He, Wengang Wu

823-mA/mm Drain Current Density and 945-MW/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

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Hongyue Wang

, Jinyan Wang, Jingqian Liu, Yandong He, Maojun Wang, Min Yu, Wengang Wu

Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics

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Hongyue Wang

, Jinyan Wang, Mengjun Li, Yandong He, Maojun Wang, Min Yu, Wengang Wu, Yang Zhou, Gang Dai

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

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2017 Hongyue Wang

, Jinyan Wang, Jingqian Liu, Mengjun Li, Yandong He, Maojun Wang, Min Yu, Wengang Wu, Yang Zhou, Gang Dai

Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics

Download from stacks.iop.org

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Papers authored by Hongyue Wang