Hongyue Wang
0000-0002-3070-0732
The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology
32 papers found
Refreshing results…
Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors
Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
An Advanced Forward Asymmetric Correction Method for an Electromagnetic Near-Field Probing System
Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate
Electrothermal Reliability Analysis of Electromigration in 3-D TSV-RDL Interconnects
Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs
Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study
High-Frequency Transmission Characteristic Analysis of TSV-RDL Interconnects
Research on the contamination failure mechanism of HgCdTe IRFPA detectors
A Simple Wideband Differential Magnetic Probe Loaded With Out-of-Phase Balun and Parasitic Loop
Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
Photoelectric characteristics of hydrogen-terminated polycrystalline diamond MESFETs
A High-Sensitivity Composite Probe Capable of Simultaneously Measuring Electric- and Magnetic-Field Components
Improved performance of enhancement-mode GaN MIS-FET based on a self-terminating gate recess etching technique with in situ NH3 pre-treatment
Thermo-Mechanical Stability of Resin-Added Sintered Silver Joints Between Si Die and Ni-/Au-Electroplated Substrate
Study on The Influence Mechanism of TSV Structural Defects on High Frequency Transmission Characteristics
A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Study on The Heat Dissipation Performance of Symmetrical Broken-line Microchannel Radiator
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