Hele Savin
Aalto-yliopisto Sähkötekniikan korkeakoulu
10 papers found
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Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C
UploadRecombination processes in passivated boron-implanted black silicon emitters
Download from aaltodoc.aalto.fiAccelerated light-induced degradation for detecting copper contamination in p-type silicon
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