Yongliang Li
0000-0002-5590-861X
52 papers found
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An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
Insights into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs
Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si p-FinFETs
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device
Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme
A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown
Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation
Investigation of NiGe Films Formed on Both n+- and p+-Ge with P and B Ion Implantation before Germanidation
Dry Etching of Metal Inserted Poly-Si Stack for Dual High-k and Dual Metal Gate Integration
Fabrication Technique for pMOSFET poly-Si/TaN/TiN/HfSiAlON Gate Stack
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