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Integration of Si0.7Ge0.3 fin onto a bulk-Si substrate and its P-type FinFET device fabrication
Download from iopscience.iop.orgInvestigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation
Download from iopscience.iop.orgNovel Si/SiGe fin on insulator fabrication on bulk-Si substrate
Download from iopscience.iop.orgFour-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Download from doi.orgSelective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs
Download from link.springer.comInvestigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization
UploadInvestigation on thermal stability of Si0.7Ge0.3/Si stacked multilayer for gate-all-around MOSFETS
Download from iopscience.iop.orgKey Process Technologies for Stacked Double Si0.7Ge0.3 Channel Nanowires Fabrication
Download from iopscience.iop.orgStudy of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Download from doi.orgFabrication technique of the Si0.5Ge0.5 Fin for the high mobility channel FinFET device
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