Kar Wei Ng
0000-0002-6047-3104
University of Macau
88 papers found
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Single Crystalline GaAs Nanoneedles Grown on 46% Lattice-Mismatched Sapphire with Bright Luminescence
InGaAs QW Nanopillar Light Emitting Diodes Monolithically Grown on a Si Substrate
As-Grown InGaAs Nanolasers for Integrated Silicon Photonics
Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD
Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon- Transparent emission
GaAs Nanoneedle Photodetector Monolithically Grown on a (111) Si Substrate by MOCVD
Growth and Characterizations of GaN-Based LEDs Grown on Wet-Etched Stripe-Patterned Sapphire Substrates
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
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