Kar Wei Ng
0000-0002-6047-3104
University of Macau
88 papers found
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Nanopillar Lasers Directly Grown on Silicon with Heterostructure Surface Passivation
High Brightness InP Micropillars Grown on Silicon with Fermi Level Splitting Larger than 1 eV
InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate
Tailoring the Optical Characteristics of Microsized InP Nanoneedles Directly Grown on Silicon
Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond the Substrate Grain Size Limit
High quality InGaP micropillars directly grown on silicon
High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV
Unconventional Growth Mechanism for Monolithic Integration of III–V on Silicon
Characteristics of InP nanoneedles grown on silicon by low-temperature MOCVD
High-speed avalanche photodiodes using III–V nanopillars monolithically grown on silicon
Nanolasers grown on silicon-based MOSFETs
GaAs nanoneedles grown on sapphire
GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate
Nanolasers grown on silicon
Helically Propagating Modes in InGaAs Nanoneedle Lasers Grown on Poly-Silicon and Silicon Substrates
Nanopillar lasers on silicon
Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates
Nanolasers on Si-MOSFET: A Monolithic Integration
Nanolasers grown on polycrystalline silicon
All-semiconductor nanolasers on silicon
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