Jorge Kittl
Samsung Semiconductor Inc USA
197 papers found
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Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
UploadFUSI Specific Yield Monitoring Enabling Improved Circuit Performance and Fast Feedback to Production
UploadImpact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon
Download from www.researchgate.netAchieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Download from www.researchgate.netPhase effects and short gate length device implementation of Ni fully silicided (FUSI) gates
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