Matteo Meneghini
0000-0003-2421-505X
405 papers found
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Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy
Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Reliability and failure analysis in power GaN-HEMTs: An overview
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin
Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties
GaN HEMTs with p-GaN gate: field- and time-dependent degradation
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress
Defect-Related Degradation of AlGaN-Based UV-B LEDs
Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation
ESD sensitivity of GaN-based electronic devices
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
Degradation of InGaN-based LEDs related to charge diffusion and build-up
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes
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