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Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework
UploadAtmospheres in a Test Tube: State of the art at the Astronomical Observatory of Padova
UploadImpact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Download from research-information.bristol.ac.ukHigh voltage trapping effects in GaN-based metal–insulator–semiconductor transistors
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