Iain Thayne - Dissemin

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All papers authored by Iain Thayne

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2020 Jerome A. Cuenca

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, Matthew D. Smith

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, Daniel E. Field, Fabien C.-P. Massabuau, Soumen Mandal, James Pomeroy

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, David J. Wallis

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, Rachel A. Oliver

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, Iain Thayne

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, Martin Kuball, Oliver A. Williams

Thermal stress modelling of diamond on GaN/III-Nitride membranes

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2017 Mohsin Aziz, Chengzhi Xie, Vincenzo Pusino, Ata Khalid

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, Matthew Steer, Iain G. Thayne

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, David R. S. Cumming

Multispectral mid-infrared light emitting diodes on a GaAs substrate

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Yen-Chun Fu, Uthayasankaran Peralagu

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, David A. J. Millar, Jun Lin, Ian Povey

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, Xu Li

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, Scott Monaghan

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, Ravi Droopad, Paul K. Hurley, Iain G. Thayne

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The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

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2016 J. W. Roberts, P. R. Chalker, K. B. Lee, P. A. Houston, S. J. Cho, I. G. Thayne

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, I. Guiney, D. Wallis

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, C. J. Humphreys

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Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

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2015 Laura Meriggi

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, Matthew J. Steer, Ying Ding, Iain G. Thayne

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, Calum MacGregor, Charles N. Ironside

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, Marc Sorel

Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

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2014 Uthayasankaran Peralagu, Ian M. Povey, Patrick Carolan

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, Jun Lin, Rocio Contreras-Guerrero, Ravi Droopad, Paul K. Hurley

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, Iain G. Thayne

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Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments

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