Evan Cornuelle
0000-0002-4955-6072
7 papers found
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Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
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