Jeffrey Daulton
Massachusetts Institute of Technology Lincoln Laboratory
14 papers found
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GaN hot electron transistors: From ballistic to coherent
UploadHydrogen and deuterium termination of diamond for low surface resistance and surface step control
UploadInAlN/GaN-on-Si HEMT with 4.5 W/mm in a 200-mm CMOS-Compatible MMIC Process for 3D Integration
UploadThe Role of Macrophage Phenotype in Vascularization of Tissue Engineering Scaffolds
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