Eleni Paloura
xafslab.physics.auth.gr
0000-0001-9143-037X
Aristotle University of Thessaloniki
112 papers found
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On the Contribution of a Nitrogen-Related Defect in the Nexafs Spectra of Thin Si3N4 Films
Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy
Low-temperature dc characteristics of S- and Si-doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy
Modifications in α‐Si:H during thermal annealing:Insituspectroscopic ellipsometry
Comparative study of the properties of ultrathin Si3N4films with Auger electron spectroscopy, spectroscopic ellipsometry, and Raman spectroscopy
Growth and electronic properties of thin Si3N4films grown on Si in a nitrogen glow discharge
New application for isothermal capacitance transient spectroscopy: Identification of tunneling in semiconductor-insulator interfaces
Effect of doping on electron traps in metalorganic molecular-beam epitaxial GaxIn1−xP/GaAs heterostructures
Evidence for an intermediate modulated structure in the region of the β – γ transition in lead orthovanadate
Silicon nitride films grown on silicon below 300 °C in low power nitrogen plasma
GROWTH OF THE HIGH QUALITY SILICON NITRIDE FILMS IN LOW POWER NITROGEN AT TEMPERATURES BELOW 300 Degree C.
Donor related deep traps in MOMBE Ga/sub 0.51/In/sub 0.49/P/GaAs heterostructures: influence on the low temperature performance of HEMTs
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