Eleni Paloura
Aristotle University of Thessaloniki
112 papers found
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XAFS characterization of buried SixNyOz samples
Download from www.researchgate.netA parametric study of implantation-induced variations on the mechanical properties of epitaxial GaN
Download from www.researchgate.netIon implantation effects on the microhardness and microstructure of GaN
Download from www.researchgate.netStudy of group-III binary and ternary nitrides using X-ray absorption fine structure measurements
Download from www.researchgate.netNitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides
Download from www.researchgate.netNitrogenK-edge EXAFS measurements on Mg- and Si-doped GaN
Download from journals.iucr.orgGalliumK-edge EXAFS measurements on cubic and hexagonal GaN
Download from journals.iucr.orgOn the effect of ion implantation in the microstructure of GaN: an XAFS study
Download from journals.iucr.orgDose- and annealing-induced changes in the microstructure of buried SiNx: An x-ray absorption study
Download from www.researchgate.netNK-edge x-ray-absorption study of heteroepitaxial GaN films
Download from www.researchgate.netN- and Al-K-edge EXAFS of AlN grown on GaAs by MBE
Download from www.researchgate.netAngle resolved NEXAFS spectra of hexagonal and cubic GaN
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