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First-principles calculations of iron-hydrogen reactions in silicon
UploadTutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
Download from www.research.manchester.ac.ukOptoelectronics and defect levels in hydroxyapatite by first-principles
Download from aip.scitation.orgMultiscale in modelling and validation for solar photovoltaics
Download from doi.orgAdsorption of H2, O2, H2O, OH and H on monolayer MoS2
Download from iopscience.iop.orgSi(111) strained layers on Ge(111): Evidence for c ( 2×4 ) domains
Download from arxiv.orgMössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations
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