Luc Stafford
0000-0003-0647-543X
137 papers found
Refreshing results…
Modification of Sugar Maple (Acer saccharum) and Black Spruce (Picea mariana) Wood Surfaces in a Dielectric Barrier Discharge (DBD) at Atmospheric Pressure
Recombination of chlorine atoms on plasma-conditioned stainless steel surfaces in the presence of adsorbed Cl2
Effect of Cu contamination on recombination of O atoms on a plasma-oxidized silicon surface
Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching
Electron energy distribution functions in low-pressure oxygen plasma columns sustained by propagating surface waves
Aging and Stability of GaN High Electron Mobility Transistors and Light-Emitting Diodes With $\hbox{TiB}_{2}$- and Ir-Based Contacts
In-Situ Surface Recombination Measurements of Oxygen Atoms on Anodized Aluminum in an Oxygen Plasma
Recombination probability of oxygen atoms on dynamic stainless steel surfaces in inductively coupled O2 plasmas
High temperature Ohmic contacts to p-type GaN for use in light emitting applications
Ir-based diffusion barriers for Ohmic contacts to p-GaN
Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas
In-situ Surface Recombination Measurement of Oxygen and Chlorine Atoms on Dynamic Stainless Steel Surfaces in Inductively Coupled O2 and Cl2 Plasmas
High Temperature Stable Contacts for GaN HEMTs and LEDs
Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN
Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium–zinc-oxide films
W2B and CrB2 diffusion barriers for Ni∕Au contacts to p-GaN
Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers
Improved long-term thermal stability of InGaN∕GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-Ohmic contacts
Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO3 films in Ar∕SF6 plasmas
Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers
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