Shigeru Kimura - Dissemin

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Papers authored by Shigeru Kimura

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2001 Y. Chikaura, S. Iida, S. Kawado, K. Mizuno, S. Kimura

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, J. Matsui, M. Umeno, T. Ozaki, T. Shimura, Y. Suzuki, K. Izumi, K. Kawasaki, K. Kajiwara, T. Ishikawa

Construction of topography stations at SPring-8 and first observations

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Kenji Kobayashi, Koichi Izumi, Hidekazu Kimura, Shigeru Kimura

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, Takashi Ibuki, Yoshiyuki Yokoyama, Yoshiyuki Tsusaka, Yasushi Kagoshima, Junji Matsui

X-ray phase-contrast imaging with submicron resolution by using extremely asymmetric Bragg diffractions

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2000 Naoki Awaji, Shinji Ozaki, Junichi Nishino, Sinichi Noguchi, Tohru Yamamoto, Takashi Syoji, Motoyuki Yamagami, Akira Kobayashi, Masahiro Shibata, You Hirai, Koji Yamaguchi, Kuang-Yu Liu, Seiji Kawado, Mamoru Takahashi, Shigeru Yasuami and 7 other authors

Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8

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Yoshiyuki Tsusaka, Kazushi Yokoyama, Shingo Takeda, Masafumi Urakawa, Yasushi Kagoshima, Junji Matsui, Shigeru Kimura

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, Hidekazu Kimura, Kenji Kobayashi, Koichi Izumi

Formation of Parallel X-Ray Microbeam and Its Application

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Shigeru Kimura

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, Hidekazu Kimura, Kenji Kobayashi, Tomoaki Oohira, Koich Izumi, Yasutaka Sakata, Yoshiyuki Tsusaka, Kazushi Yokoyama, Shingo Takeda, Masafumi Urakawa, Yasushi Kagoshima, Junji Matsui

High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy

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1999 Koji Watanabe, Shigeru Kimura

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, Toru Tatsumi

Ultrathin Oxide Film Formation Using Radical Oxygen in an Ultrahigh Vacuum System

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Kenji Kobayashi, A. Atsushi Yamaguchi, Shigeru Kimura

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, Haruo Sunakawa, Akitaka Kimura, Akira Usui

X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique

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Yasuharu Kashihara, Shigeru Kimura

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CTR Scattering Derived from Dynamical Theory of Diffraction

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1998 Shigeru Kimura

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, Tatsuya Matsumura, Katsuyuki Kinoshita, Keiichi Hirano, Hiroshi Kihara

High-resolution X-ray topographic images of dislocations in a silicon crystal recorded using an X-ray zooming tube

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Shigeru Kimura

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, Atsushi Ogura

Precise Measurement of Strain Induced by Local Oxidation in Thin Silicon Layers of Silicon-on-Insulator Structures

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1996 Shigeru Kimura

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, Atsushi Ogura, Tetsuya Ishikawa

Characterization of surface imperfections of silicon-on-insulator wafers by means of extremely asymmetric x-ray reflection topography

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H. Ono, T. Ikarashi, S. Kimura

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, A. Tanikawa, K. Terashima

Control of oxygen precipitates distribution in large-diameter silicon wafers after thermal annealing

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1995 Masahito Watanabe, Minoru Eguchi, Koichi Kakimoto, Haruhiko Ono, Shigeru Kimura

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, Taketoshi Hibiya

Flow mode transition and its effects on crystal—melt interface shape and oxygen distribution for Czochralski-grown Si single crystals

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Shigeru Kimura

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, Tetsuya Ishikawa

Relation between lattice strain and anomalous oxygen precipitation in a Czochralski-grown silicon

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Haruhiko Ono, Taeko Ikarashi, Shigeru Kimura

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, Akio Tanikawa

Anomalous ring-shaped distribution of oxygen precipitates in a Czochralski-grown silicon crystal

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1994 Taketoshi Hibiya, Hiroe Suzuki, Ichiro Yonenaga, Shigeru Kimura

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, Tatsuo Kawaguchi, Toetsu Shishido, Tsuguo Fukuda

Liquid phase epitaxial growth and characterization of LiNbO3 single crystal films

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S. Kimura

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, J. Harada, T. Ishikawa

Comparison between experimental and theoretical rocking curves in extremely asymmetric Bragg cases of X-ray diffraction

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Haruhiko Ono, Taeko Ikarashi, Shigeru Kimura

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, Akio Tanikawa

Preanneal effect on the ring-shaped distribution of oxygen precipitates in Czochralski-grown silicon

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1993 Tomohisa Kitano, Eiji Hasegawa, Masaru Tsukiji, Koichi Akimoto, Shigeru Kimura

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, Shuichi Saito, Kazuko Ikeda

Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide

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Shigeru Kimura

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, Haruhiko Ono, Taeko Ikarashi, Tetsuya Ishikawa

Minute Strain Fields due to Vacancy Type Defects in a Rapidly Cooled Czochralski-Grown Silicon Crystal

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