Dae Woong
0000-0001-8261-4337
12 papers found
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Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application
Novel Dual Liner Process for Side-Shielded Forksheet Device With Superior Design Margin
Damage-Induced Ferroelectricity in HfOx-Based Thin Film
Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory
Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure
Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices
Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin Structure
Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory
Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x -based metal-ferroelectric-insulator-semiconductor stack
A novel physical unclonable function (PUF) using 16 × 16 pure-HfO x ferroelectric tunnel junction array for security applications
Suppression of reverse drain induced barrier lowering in negative capacitance FDSOI field effect transistor using oxide charge trapping layer
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