F. Oehler
CNRS Centre for Nanoscience and Nanotechnology
65 papers found
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Towards a better understanding of trench defects in InGaN/GaN quantum wells
Download from dx.doi.orgSurface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Download from doi.orgFundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds
Download from iopscience.iop.orgComposition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates
Download from strathprints.strath.ac.ukHidden defects in silicon nanowires
Download from hal.archives-ouvertes.frEffect of HCl on the Doping and Shape Control of Silicon Nanowires
Download from www.researchgate.netPhotoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
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