Published in
IOP Publishing, Semiconductor Science and Technology, 6(28), p. 065011
DOI: 10.1088/0268-1242/28/6/065011
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Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates
Journal article published in 2013 by
E. Taylor,
F. Fang,
F. Oehler 
,
P. R. Edwards ,
M. J. Kappers,
K. Lorenz,
E. Alves,
C. McAleese,
C. J. Humphreys,
R. W. Martin
,
P. R. Edwards ,
M. J. Kappers,
K. Lorenz,
E. Alves,
C. McAleese,
C. J. Humphreys,
R. W. Martin
This paper is available in a repository.
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