F. Oehler
CNRS Centre for Nanoscience and Nanotechnology
64 papers found
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Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure
UploadIntrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
Download from doi.orgQuantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
UploadElectronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition
UploadDirect observation of highly anisotropic electronic and optical nature in indium telluride
UploadNanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
UploadInterface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)
Download from arxiv.orgThe atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Download from doi.orgStructural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
Download from doi.orgCorrigendum: Self-induced growth of vertical GaN nanowires on silica (2015Nanotechnology27135602)
Download from iopscience.iop.orgThe microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells
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