F. Oehler
CNRS Centre for Nanoscience and Nanotechnology
65 papers found
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Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure
UploadIntrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
Download from doi.orgQuantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
UploadElectronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition
UploadDirect observation of highly anisotropic electronic and optical nature in indium telluride
UploadExtreme mechanical tunability in suspended MoS2 resonator controlled by Joule heating
Download from www.nature.comStrain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
Download from doi.orgNanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
UploadInterface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)
Download from arxiv.orgThe atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Download from doi.orgStructural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
Download from doi.orgCorrigendum: Self-induced growth of vertical GaN nanowires on silica (2015Nanotechnology27135602)
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