Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)

Henck, Hugo; Ben Aziza, Zeineb; Zill, Olivia; Pierucci, Debora; Naylor, Carl H.; Silly, Mathieu G.; Gogneau, Noelle; Oehler, Fabrice; Collin, Stephane; Brault, Julien; Sirotti, Fausto; Bertran, François; Le Fèvre, Patrick; Berciaud, Stéphane; Johnson, A. T. Charlie; Lhuillier, Emmanuel; Rault, Julien E.; Ouerghi, Abdelkarim

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American Physical Society, Physical review B, 11(96)

DOI: 10.1103/physrevb.96.115312

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Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)

Journal article published in 2017 by Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler

, Stephane Collin, Julien Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T. Charlie Johnson and other authors.

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Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)