Papers authored by Gaudenzio Meneghesso
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Matteo Meneghini 
,
Nicola Trivellin,
Gaudenzio Meneghesso ,
Lorenzo Trevisanello,
Enrico Zanoni,
Kenji Orita,
Masaaki Yuri,
Daisuke Ueda
,
Nicola Trivellin,
Gaudenzio Meneghesso ,
Lorenzo Trevisanello,
Enrico Zanoni,
Kenji Orita,
Masaaki Yuri,
Daisuke Ueda
Analysis of the role of current in the degradation of InGaN-based laser diodes
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A. Chini ,
M. Esposto,
G. Meneghesso ,
E. Zanoni
,
M. Esposto,
G. Meneghesso ,
E. Zanoni
Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements
Download from doi.org
2008
A. Griffoni,
S. Thijs,
C. Russ,
D. Tremouilles,
M. Scholz,
D. Linten,
N. Collaert,
R. Rooyackers,
C. Duvvury,
H. Gossner,
G. Meneghesso ,
G. Groeseneken
,
G. Groeseneken
Impact of strain on ESD robustness of finFET devices
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Alessio Griffoni,
Marco Silvestri,
Simone Gerardin,
Gaudenzio Meneghesso ,
Alessandro Paccagnella,
Ben Kaczer,
Muriel de Potter de ten Broeck,
De Ten Broeck,
Rita Verbeeck,
Axel Nackaerts
,
Alessandro Paccagnella,
Ben Kaczer,
Muriel de Potter de ten Broeck,
De Ten Broeck,
Rita Verbeeck,
Axel Nackaerts
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
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Francesca Danesin,
Augusto Tazzoli,
Franco Zanon,
Gaudenzio Meneghesso ,
Enrico Zanoni,
Antonio Cetronio,
Claudio Lanzieri,
Simone Lavanga,
Marco Peroni,
Paolo Romanini
,
Enrico Zanoni,
Antonio Cetronio,
Claudio Lanzieri,
Simone Lavanga,
Marco Peroni,
Paolo Romanini
Thermal storage effects on AlGaN/GaN HEMT
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