Sangwan Kim
0000-0002-6492-7740
4 papers found
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Investigation of Device Performance for Fin Angle Optimization in FinFET and Gate-All-Around FETs for 3 nm-Node and Beyond
Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure
Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation
Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs
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