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Impact of barrier layer on HfO2-based conductive bridge random access memory
UploadSwitching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
Download from doi.orgBoosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
Download from iopscience.iop.orgA Collective Study on Modeling and Simulation of Resistive Random Access Memory
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