Tseung-Yuen Tseng
scholar.nctu.edu.tw
0000-0003-1158-5289
國立交通大學
274 papers found
Refreshing results…
Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications
Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
Synaptic behaviour of TiO x /HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications
Cathodic plasma–induced syntheses of graphene nanosheet/MnO2/WO3 architectures and their use in supercapacitors
Porous carbon materials derived from areca palm leaves for high performance symmetrical solid-state supercapacitors
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Nickel Cobaltite Nanoneedle/Porous Graphene Nanosheets Network Nanocomposite Electrodes with Ultra-High Specific Capacitance for Energy Storage Applications
Barrier Layer Induced Switching Stability in Ga:ZnO Nanorods Based Electrochemical Metallization Memory
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
Templating synthesis of nickel cobaltite nanoflakes and their nanocomposites for making high-performance symmetric supercapacitors
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
Improving linearity by introducing Al in HfO2 as a memristor synapse device
Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory
Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
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