Marco Malinverni
0000-0003-4151-8378
4 papers found
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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes
n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
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