All papers authored by Nicolas Grandjean
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A. Y. Polyakov,
C. Haller,
N. B. Smirnov 
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A. S. Shiko,
I. V. Shchemerov,
S. V. Chernykh ,
L. A. Alexanyan,
P. B. Lagov,
Y.-U. S. Pavlov ,
J.-F. Carlin,
M. Mosca,
R. Butté ,
N. Grandjean ,
S. J. Pearton
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,
A. S. Shiko,
I. V. Shchemerov,
S. V. Chernykh ,
L. A. Alexanyan,
P. B. Lagov,
Y.-U. S. Pavlov ,
J.-F. Carlin,
M. Mosca,
R. Butté ,
N. Grandjean ,
S. J. Pearton
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P. Sohi ,
J.-F. Carlin,
N. Grandjean
,
J.-F. Carlin,
N. Grandjean
Alloy disorder limited mobility of InGaN two-dimensional electron gas
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G. Callsen,
T. Kure,
M. R. Wagner ,
R. Butté ,
N. Grandjean
,
R. Butté ,
N. Grandjean
Excited states of neutral donor bound excitons in GaN
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Ian Rousseau ,
Gordon Callsen,
Gwénolé Jacopin ,
Jean-François Carlin,
Raphaël Butté ,
Nicolas Grandjean
,
Gordon Callsen,
Gwénolé Jacopin ,
Jean-François Carlin,
Raphaël Butté ,
Nicolas Grandjean
Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
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Raphaël Butté ,
Lise Lahourcade,
Tomas Kristijonas Uždavinys,
Gordon Callsen,
Mounir Mensi,
Marlene Glauser,
Georg Rossbach,
Denis Martin,
Jean-François Carlin,
Saulius Marcinkevičius,
Nicolas Grandjean
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,
Lise Lahourcade,
Tomas Kristijonas Uždavinys,
Gordon Callsen,
Mounir Mensi,
Marlene Glauser,
Georg Rossbach,
Denis Martin,
Jean-François Carlin,
Saulius Marcinkevičius,
Nicolas Grandjean
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V. Portz,
M. Schnedler,
L. Lymperakis,
J. Neugebauer,
H. Eisele,
J.-F. Carlin,
R. Butté ,
N. Grandjean ,
Rafal E. Dunin-Borkowski,
P.-H. Ebert
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N. Grandjean ,
Rafal E. Dunin-Borkowski,
P.-H. Ebert
Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces
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L. Rigutti ,
L. Mancini ,
D. Hernández Maldonado,
W. Lefebvre,
E. Giraud,
R. Butté ,
J. F. Carlin,
N. Grandjean ,
D. Blavette,
F. Vurpillot
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,
L. Mancini ,
D. Hernández Maldonado,
W. Lefebvre,
E. Giraud,
R. Butté ,
J. F. Carlin,
N. Grandjean ,
D. Blavette,
F. Vurpillot
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Hironori Okumura,
Denis Martin,
Marco Malinverni ,
Nicolas Grandjean
,
Nicolas Grandjean
Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Download from tsukuba.repo.nii.ac.jp
Hironori Okumura,
Denis Martin,
Nicolas Grandjean
Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
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