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Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time
UploadAlN/AlGaN/AlN quantum well channel HEMTs
UploadMolecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
Download from doi.orgMolecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
Download from doi.orgInfrared dielectric functions and Brillouin zone center phonons of α−Ga2O3 compared to α - Al2O3
UploadDislocation and indium droplet related emission inhomogeneities in InGaN LEDs
Download from iopscience.iop.orgγ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
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