Hideto Miyake
0000-0002-1054-666X
7 papers found
Refreshing results…
Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing
Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K
Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations
Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy
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