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Temperature-induced degradation of GaN HEMT: An in situ heating study
UploadE-mode AlGaN/GaN HEMTs using p-NiO gates
UploadType II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C
Download from avs.scitation.orgAtomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
Download from aip.scitation.orgThermal stability of band offsets of NiO/GaN
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