Robert M. Wallace

Papers authored by Robert M. Wallace

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2014 Corsin Battaglia, Xingtian Yin, Maxwell Zheng, Ian D. Sharp, Teresa L. Chen, Stephen McDonnell, Angelica Azcatl, Stephen McDonell, Carlo Carraro, Biwu Ma, Roya Maboudian, Robert M. Wallace

, Ali Javey

Hole Selective MoOx Contact for Silicon Solar Cells

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W. Cabrera, B. Brennan

, H. Dong, T. P. O'Regan, I. M. Povey, S. Monaghan, É. O'Connor, P. K. Hurley

, R. M. Wallace

, Y. J. Chabal

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

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2013 Don Dick, Jean-Francois Veyan, R. C. Longo, Stephen McDonnell, Josh B. Ballard, Xiaoye Qin, Hong Dong, James H. G. Owen, John N. Randall, Robert M. Wallace

, Kyeongjae Cho, Yves J. Chabal

Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth

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P. K. Hurley

, Eamon O'Connor, V. Djara, S. Monaghan, I. M. Povey, R. D. Long, B. Sheehan, J. Lin, P. C. McIntyre, B. Brennan, R. M. Wallace

, M. E. Pemble, K. Cherkaoui

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

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Cheng Gong, Stephen McDonnell, Xiaoye Qin, Angelica Azcatl, Hong Dong, Yves J. Chabal, Kyeongjae Cho, Robert M. Wallace

Realistic Metal-Graphene Contact Structures

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Cheng Gong, Chunming Huang, Justin Miller, Lanxia Cheng

, Yufeng Hao, David Cobden, Jiyoung Kim, Rodney S. Ruoff, Robert M. Wallace

, Kyeongjae Cho, Xiaodong Xu, Yves J. Chabal

Metal Contacts on Physical Vapor Deposited Monolayer MoS2

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Stephen McDonnell, Barry Brennan, Angelica Azcatl, Ning Lu, Hong Dong, Creighton Buie, Jiyoung Kim, Christopher L. Hinkle, Moon J. Kim, Robert M. Wallace

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

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Cheng Gong, Herman Carlo Floresca, David Hinojos, Stephen McDonnell, Xiaoye Qin, Yufeng Hao, Srikar Jandhyala, Greg Mordi, Jiyoung Kim, Luigi Colombo, Rodney S. Ruoff, Moon J. Kim, Kyeongjae Cho, Robert M. Wallace

, Yves J. Chabal

Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide

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Bijesh Rajamohanan, Dheeraj Mohata, Dmitry Zhernokletov, Barry Brennan, Robert M. Wallace

, Roman Engel-Herbert, Suman Datta

Low-Temperature Atomic-Layer-Deposited High-κ Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65Heterojunction Tunneling Field-Effect Transistor

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Stephen McDonnell, Roberto C. Longo, Oliver Seitz, Josh B. Ballard, Greg Mordi, Don Dick, James H. G. Owen, John N. Randall, Jiyoung Kim, Yves J. Chabal, Kyeongjae Cho, Robert M. Wallace

Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination

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Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace

, Kyeongjae Cho

Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors

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Luigi Colombo, Robert M. Wallace

, Rodney S. Ruoff

Graphene Growth and Device Integration

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J. B. Ballard, J. H. G. Owen, E. Fuchs, S. McDonnell, D. Dick, G. Mordi, A. Azcatl, O. Seitz, P. Campbell, J. F. Veyan, Y. Chabal, R. M. Wallace

, M. Bischof, D. Jaeger, R. Reidy and 2 other authors

Atomically-precise three-dimensional top down fabrication

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This paper is made freely available by the publisher.

Christopher L. Hinkle, Rohit V. Galatage, Hong Dong, Sarkar R. M. Anwar, Barry Brennan, Robert M. Wallace

, Eric M. Vogel

(Invited) III-V/High-k Defects: DIGS vs. Border Traps

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C. D. Young, R. J. W. Hill, K. Matthews, W. Wang, C. Hinkle, R. M. Wallace

, W. Loh, C. Hobbs, P. D. Kirsch, R. Jammy

Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In0.53Ga0.47As nMOSFETs

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Yuming Ai, Srinivas Gowrisanker, Huiping Jia, Manuel Quevedo-Lopez, Husam N. Alshareef

, Robert M. Wallace

, Bruce E. Gnade

Encapsulation of high frequency organic Schottky diodes

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Heesung Choi, Roberto C. Longo, Min Huang, John N. Randall, Robert M. Wallace

, Kyeongjae Cho

A density-functional theory study of tip electronic structures in scanning tunneling microscopy

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K. C. Santosh, Weichao Wang

, Hong Dong, Ka Xiong, Roberto C. Longo, Robert M. Wallace

, Kyeongjae Cho

First principles study on InP (001)-(2 × 4) surface oxidation

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Brian E. Coss, Prasanna Sivasubramani, Barry Brennan, Prashant Majhi, Robert M. Wallace

, Jiyoung Kim

Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterization techniques

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H. Dong, W. Cabrera, R. V. Galatage, Santosh Kc, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, R. M. Wallace

Indium diffusion through high-k dielectrics in high-k/InP stacks

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Papers authored by Robert M. Wallace