Researcher
Masataka Higashiwaki
Osaka Metropolitan University
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206 papers found
Papers authored by Masataka Higashiwaki
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M. Higashiwaki 
,
T. Matsui
,
T. Matsui
MBE growth and device characteristics of InAlN/GaN HFETs
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Masataka Higashiwaki ,
Toshiaki Matsui
,
Toshiaki Matsui
InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
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A. Endoh,
Y. Yamashita,
K. Shinohara,
M. Higashiwaki ,
K. Hikosaka,
T. Matsui,
S. Hiyamizu,
T. Mimura
,
K. Hikosaka,
T. Matsui,
S. Hiyamizu,
T. Mimura
InP HEMTs: physics, applications, and future
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Akira Endoh,
Yoshimi Yamashita,
Keiji Ikeda,
Masataka Higashiwaki ,
Kohki Hikosaka,
Toshiaki Matsui,
Satoshi Hiyamizu,
Takashi Mimura
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,
Kohki Hikosaka,
Toshiaki Matsui,
Satoshi Hiyamizu,
Takashi Mimura
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2003
T. Inushima,
M. Higashiwaki ,
T. Matsui
,
T. Matsui
Optical properties of Si-doped InN grown on sapphire (0001)
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Akira Endoh,
Yoshimi Yamashita,
Keiji Ikeda,
Masataka Higashiwaki ,
Kohki Hikosaka,
Toshiaki Matsui,
Satoshi Hiyamizu,
Takashi Mimura1
,
Kohki Hikosaka,
Toshiaki Matsui,
Satoshi Hiyamizu,
Takashi Mimura1
Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire
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T. Inushima,
M. Higashiwaki ,
T. Matsui,
T. Takenobu,
M. Motokawa
,
T. Matsui,
T. Takenobu,
M. Motokawa
Electronic structure of InN observed by Shubnikov–de Haas measurements
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Masataka Higashiwaki ,
Toshiaki Matsui
,
Toshiaki Matsui
Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures
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