Masataka Higashiwaki

Papers authored by Masataka Higashiwaki

This paper is made freely available by the publisher.

2002 M. Higashiwaki

, A. Rizzi, A. Hoffmann, T. Matsui

Effect of Low-Temperature-Grown GaN Intermediate Layer on InN Growth by Plasma-Assisted MBE

Download from onlinelibrary.wiley.com

This paper was not found in any repository, but could be made available legally by the author.

Masataka Higashiwaki

, Toshiaki Matsui

High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

Upload

Akira Endoh, Yoshimi Yamashita, Keisuke Shinohara, Masataka Higashiwaki

, Kohki Hikosaka, Takashi Mimura, Satoshi Hiyamizu, Toshiaki Matsui

Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

Upload

2001 Y. Yamashita, A. Endoh, K. Shinohara, M. Higashiwaki

, K. Hikosaka, T. Mimura, S. Hiyamizu, T. Matsui

Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

Upload

This paper was not found in any repository; the policy of its publisher is unknown or unclear.

A. Endoh, Y. Yamashita, M. Higashiwaki

, K. Hikosaka, T. Mimura, S. Hiyamizu, A. Matsui, T. Matsui

High RF performance of 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

Upload

T. Matsui, K. Shinohara, M. Higashiwaki

, N. Hirose

Research project on millimeter-wave semiconductor devices

Upload

2000 Yoshimi Yamashita, Akira Endoh, Masataka Higashiwaki

, Kohki Hikosaka, Takashi Mimura, Satoshi Hiyamizu, Toshiaki Matsui

High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

Download from iopscience.iop.org

Masataka Higashiwaki

, Masataka Higashiwaki Masataka Higashiwaki, Takahiro Kitada, Takahiro Kitada Takahiro Kitada, Toyohiro Aoki, Toyohiro Aoki Toyohiro Aoki, Satoshi Shimomura, Yoshimi Yamashita, Akira Endoh Akira Endoh, Akira Endoh, Kohki Hikosaka, Takashi Mimura, Takashi Mimura Takashi Mimura, Toshiaki Matsui, Toshiaki Matsui Toshiaki Matsui and 2 other authors

DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

Download from iopscience.iop.org

Yasuhide Ohno, Masataka Higashiwaki

, Satoshi Shimomura, Satoshi Hiyamizu, Seiji Ikawa

Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)6(AlAs)1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Upload

M. Higashiwaki

, T. Kitada, T. Aoki, S. Shimomura, Y. Yamashita, A. Endoh, K. Hikosaka, T. Mimura, T. Matsui, S. Hiyamizu

Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As HEMTs with super-flat interfaces fabricated on (411)A-oriented InP substrates

Upload

Akira Endoh, Yoshimi Yamashita, Masataka Higashiwaki

, Kohki Hikosaka, Takashi Mimura, Satoshi Hiyamizu, Toshiaki Matsui

High f_T 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

Upload

1999 S. Hiyamizu, Y. Ohno, M. Higashiwaki

, S. Shimomura

In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy

Upload

Masataka Higashiwaki

, Seiji Ikawa, Satoshi Shimomura, Satoshi Hiyamizu

GaAs/(GaAs)4(AlAs)2 quantum wire lasers grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

Upload

S. Hiyamizu, T. Kitada, T. Aoki, M. Higashiwaki

, S. Shimomura

Higher mobility with high concentration of 2DEG in pseudomorphic In_0.7Ga_0.3As/In_0.52Al_0.48As quantum-well HEMT structure with (411)A super-flat interfaces grown on (411)A InP substrate by MBE

Upload

Masataka Higashiwaki

, Satoshi Shimomura, Satoshi Hiyamizu, Seiji Ikawa

Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Upload

1998 S. Hiyamizu, M. Higashiwaki

, M. Yamamoto, S. Shimomura

High-density In0.14Ga0.86As/(GaAs)5(AlAs)5 quantum wires naturally formed on (775)B-oriented GaAs substrates by molecular beam epitaxy

Upload

Masataka Higashiwaki

, Kazuyoshi Kuroyanagi, Kazuhisa Fujita, Norihumi Egami, Satoshi Shimomura, Satoshi Hiyamizu

Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Upload

Masataka Higashiwaki

, Satoshi Shimomura, Satoshi Hiyamizu

Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

Upload

1997 M. Higashiwaki

, M. Yamamoto, S. Shimomura, S. Hiyamizu

Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Upload

Masanori Yamamoto Masanori Yamamoto, Masanori Yamamoto, Masataka Higashiwaki

, Masataka Higashiwaki Masataka Higashiwaki, Satoshi Shimomura, Naokatsu Sano, Satoshi Hiyamizu, Satoshi Hiyamizu Satoshi Hiyamizu

Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

Download from iopscience.iop.org

Missing publications? Search for publications with a matching author name.

Researcher

Statistics

Refine

Papers authored by Masataka Higashiwaki