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ESSDERC 2007 - 37th European Solid State Device Research Conference

DOI: 10.1109/essderc.2007.4430933

Elsevier, Solid-State Electronics, 9(52), p. 1274-1279

DOI: 10.1016/j.sse.2008.04.005

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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Journal article published in 2008 by Bahman Raeissi, Johan Piscator, Olof Engström, O. Buiu, Steve Hall, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley ORCID, K. Cherkaoui, H. J. Osten
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.