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Royal Society of Chemistry, Nanoscale, 27(9), p. 9615-9621

DOI: 10.1039/c7nr03223d

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Scaling down contact length in complementary carbon nanotube field-effect transistors

Journal article published in 2017 by Lijun Liu ORCID, Chenguang Qiu, Donglai Zhong ORCID, Jia Si, Zhiyong Zhang ORCID, Lian-Mao Peng ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

This paper presents a systematic exploration on source/drain contact length scaling in carbon nanotube complementary FETs based on transfer length method.