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Royal Society of Chemistry, Nanoscale, 15(10), p. 7250-7256

DOI: 10.1039/c7nr09568f

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Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Quantitative estimation by measurements and simulations of the critical strain for Sn incorporation into graded Ge/GeSn core/shell nanowires, due to progressive strain relaxation with increasing shell thickness.