Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 23(5), p. 5810-5817
DOI: 10.1039/c7tc00266a
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To probe the performance of perovskite memory devices: defects property and hysteresis
Journal article published in 2017 by
Ziqi Xu 
,
Zonghao Liu ,
Yuan Huang,
Guanhaojie Zheng,
Qi Chen,
Huanping Zhou
,
Zonghao Liu ,
Yuan Huang,
Guanhaojie Zheng,
Qi Chen,
Huanping Zhou
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Abstract
A hybrid perovskite memory device with a decent set voltage has been successfully demonstrated, and the performance was correlated to the defect density and hysteresis-index of different perovskite films.