Published in

Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 11(6), p. 2696-2703

DOI: 10.1039/c7tc05545e

Links

Tools

Export citation

Search in Google Scholar

Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

ZnSiP2 is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.