Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 11(6), p. 2696-2703
DOI: 10.1039/c7tc05545e
Links
Tools
Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si
Journal article published in 2018 by
Aaron D. Martinez 
,
Elisa M. Miller ,
Andrew G. Norman,
Rekha R. Schnepf,
Noemi Leick ,
Craig Perkins,
Paul Stradins,
Eric S. Toberer ,
Adele C. Tamboli
,
Elisa M. Miller ,
Andrew G. Norman,
Rekha R. Schnepf,
Noemi Leick ,
Craig Perkins,
Paul Stradins,
Eric S. Toberer ,
Adele C. Tamboli
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 
Abstract
ZnSiP2 is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.