Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 30(4), p. 7215-7222, 2016
DOI: 10.1039/c6tc01486k
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Improved performance of a conducting-bridge random access memory using ionic liquids
Journal article published in 2016 by
A. Harada,
H. Yamaoka,
S. Tojo,
K. Watanabe,
A. Sakaguchi,
K. Kinoshita,
S. Kishida,
Y. Fukaya,
K. Matsumoto,
R. Hagiwara,
H. Sakaguchi,
T. Nokami 
,
T. Itoh
,
T. Itoh
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Abstract
The conducting-bridge random access memory (CB-RAM) is a promising candidate for the next-generation memory.