Published in
American Institute of Physics, Applied Physics Letters, 9(111), p. 092904, 2017
DOI: 10.1063/1.4991879
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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
Journal article published in 2017 by
N. Sedghi 
,
H. Li ,
I. F. Brunell,
K. Dawson ,
Y. Guo,
R. J. Potter ,
J. T. Gibbon ,
V. R. Dhanak,
W. D. Zhang,
J. F. Zhang,
S. Hall ,
J. Robertson,
P. R. Chalker
,
H. Li ,
I. F. Brunell,
K. Dawson ,
Y. Guo,
R. J. Potter ,
J. T. Gibbon ,
V. R. Dhanak,
W. D. Zhang,
J. F. Zhang,
S. Hall ,
J. Robertson,
P. R. Chalker
This paper is available in a repository.
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